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| High Speed InGaAs p-i-n Photodiode 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100m-diameter photosensitive region packaged in a TO-46 header, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). Chips can also be attached and wire bonded to customer-supplied or other specified packages. Headers are available with either a lensed or flat window cap. Features Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity Device Characteristics: Parameters Test Conditions -5V -5V 1300nm (-3dB) - Min 0.5 1.15 0.8 - Typ - Max -20 Units Volts Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 2 nA pF 0.90 0.5 1.0 - A/W ns GHz Absolute Maximum Ratings 30 Volts 10 mA 500 A o -40 C to + 85oC -40oC to + 85oC 250oC 829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502 |
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